| 000 | 01600nam a2200313 a 4500 | ||
|---|---|---|---|
| 008 | 120130r20091994ii a b 001 0 eng d | ||
| 010 | _a93040716 | ||
| 020 | _a9788126517909 | ||
| 020 | _a0471580058 | ||
| 040 |
_aDLC _cDLC _dDLC _dBD-KhUET |
||
| 082 | 0 | 0 |
_a621.38152 _220 |
| 100 | 1 |
_aGhandhi, Sorab Khushro, _d1928- |
|
| 245 | 1 | 0 |
_aVLSI fabrication principles : _bsilicon and gallium arsenide / _cSorab K. Ghandhi. |
| 250 | _a2nd ed. | ||
| 260 |
_aNew York : _bWiley ; _aNew Delhi : _bWiley India, _cc1994 [reprinted 2009]. |
||
| 300 |
_axxiv, 834 p. : _bill. ; _c23 cm. |
||
| 500 | _a"A Wiley-Interscience publication." | ||
| 504 | _aIncludes bibliographical references and index. | ||
| 650 | 0 |
_aIntegrated circuits _xVery large scale integration. |
|
| 650 | 0 | _aSilicon. | |
| 650 | 0 | _aGallium arsenide. | |
| 856 | 4 | 2 |
_3Publisher description _uhttp://www.loc.gov/catdir/description/wiley037/93040716.html |
| 856 | 4 |
_3Table of Contents _uhttp://www.loc.gov/catdir/toc/onix05/93040716.html |
|
| 999 |
_c3247 _d3247 |
||
| 952 |
_p3010045195 _40 _eOrbital International _00 _bKUETCL _10 _o621.38152 GHA _d2011-12-05 _t1 _70 _cGEN _2ddc _g790.35 Tk. _yBK _aKUETCL |
||
| 952 |
_w2012-01-31 _p3010045196 _r2012-10-08 _40 _eOrbital International _00 _bKUETCL _10 _o621.38152 GHA _d2011-12-05 _t2 _70 _cGEN _2ddc _g790.35 _yBK _s2012-04-02 _l1 _aKUETCL |
||
| 952 |
_p3010045197 _40 _eOrbital International _00 _bKUETCL _10 _o621.38152 GHA _d2011-12-05 _t3 _70 _cGEN _2ddc _g790.35 Tk. _yBK _aKUETCL |
||