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The Physics and Engineering of Compact Quantum Dot-based Lasers for Biophotonics / edited by Edik U. Rafailov.

Contributor(s): Rafailov, Edik U.
Material type: materialTypeLabelBookPublisher: Weinheim, Germany : Wiley, 2014Description: 1 online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9783527665617; 3527665617; 9783527665600; 3527665609; 9783527665587; 3527665587; 9781306290982; 1306290988; 9783527665594; 3527665595; 3527411844; 9783527411849.Subject(s): Photobiology | Photonics | Light | SCIENCE -- Life Sciences -- Anatomy & Physiology | Light | Photobiology | Photonics | Fotobiologia | FotònicaGenre/Form: Electronic books. | Llibres electrònics.Additional physical formats: Print version:: Physics and Engineering of Compact Quantum Dot-based Lasers for Biophotonics.DDC classification: 571.4/55 Online resources: Wiley Online Library
Contents:
The Physics and Engineering of Compact Quantum Dot-based Lasers for Biophotonics; Contents; Foreword; List of Contributors; Chapter Introduction; References; Chapter 1 Quantum Dot Technologies; 1.1 Motivation for Development of Quantum Dots; 1.2 Gain and Quantum Confinement in a Semiconductor Laser; 1.2.1 Top-Down Approach; 1.2.2 Bottom-Up Approach; 1.3 Self-Assembled Quantum Dot Technology; 1.3.1 Molecular Beam Epitaxy; 1.3.2 Growth Modes; 1.3.3 Quantum Dot Growth Dynamics; 1.3.3.1 The Interaction of the Quantum Dot and the Wetting Layer.
1.3.3.2 The Interaction of the Quantum Dot with Underlying Layers and Capping Layers1.3.3.3 Growth Interruption; 1.3.3.4 Arsenic Pressure; 1.3.3.5 Growth Temperature; 1.3.3.6 Growth Rate and Material Coverage; 1.3.4 Quantum Dot Growth Thermodynamic Processes; 1.4 Physics and Device Properties of S-K Quantum Dots; 1.4.1 Temperature Insensitivity; 1.4.2 Low Threshold Current Density; 1.4.3 Material Gain and Modal Gain; 1.4.4 Broad Spectral Bandwidth Devices and Spectral Coverage; 1.4.5 Ultrafast Gain Recovery; 1.5 Extension of Emission Wavelength of GaAs-Based Quantum Dots.
1.5.1 Short-Wavelength Quantum Dot Light Emission1.5.1.1 InP/GaInP Quantum Dots; 1.5.1.2 Type II InAlAs/AlGaAs Quantum Dots; 1.5.2 Long-Wavelength QD Light Emission; 1.5.2.1 Low Growth Temperature InAs/GaAs Quantum Dots; 1.5.2.2 InAs QDs Grown on an InGaAs Metamorphic Layer; 1.5.2.3 InGaAsSb Capped InAs/GaAs Quantum Dots and InGaNAs Capped InAs/GaAs Quantum Dots; 1.5.2.4 Bilayer InAs/GaAs QD Structures; 1.5.2.5 Asymmetric Dot in WELL QD Structure; 1.6 Future Prospects; Acknowledgments; References; Chapter 2 Ultra-Short-Pulse QD Edge-Emitting Lasers; 2.1 Introduction; 2.2 Simulations.
2.3 Broadly Tunable Frequency-Doubled EC-QD Lasers2.4 Two-Section Monolithic Mode-Locked QD Lasers; 2.4.1 Simultaneous GS and ES ML; 2.4.2 QD Absorber Resistor-SEED Functionality; 2.4.3 Pulse Width Narrowing due to GS Splitting; 2.5 Tapered Monolithic Mode-Locked QD Lasers; 2.5.1 High-Peak Power and Subpicosecond Pulse Generation; 2.5.2 Suppression of Pulse Train Instabilities of Tapered QD-MLLs; 2.6 QD-SOAs; 2.6.1 Straight-Waveguide QD-SOAs; 2.6.2 Tapered-Waveguide QD-SOAs; 2.6.3 QD-SOA Noise; 2.7 Pulsed EC-QD Lasers with Tapered QD-SOA; 2.7.1 EC-MLQDL.
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The Physics and Engineering of Compact Quantum Dot-based Lasers for Biophotonics; Contents; Foreword; List of Contributors; Chapter Introduction; References; Chapter 1 Quantum Dot Technologies; 1.1 Motivation for Development of Quantum Dots; 1.2 Gain and Quantum Confinement in a Semiconductor Laser; 1.2.1 Top-Down Approach; 1.2.2 Bottom-Up Approach; 1.3 Self-Assembled Quantum Dot Technology; 1.3.1 Molecular Beam Epitaxy; 1.3.2 Growth Modes; 1.3.3 Quantum Dot Growth Dynamics; 1.3.3.1 The Interaction of the Quantum Dot and the Wetting Layer.

1.3.3.2 The Interaction of the Quantum Dot with Underlying Layers and Capping Layers1.3.3.3 Growth Interruption; 1.3.3.4 Arsenic Pressure; 1.3.3.5 Growth Temperature; 1.3.3.6 Growth Rate and Material Coverage; 1.3.4 Quantum Dot Growth Thermodynamic Processes; 1.4 Physics and Device Properties of S-K Quantum Dots; 1.4.1 Temperature Insensitivity; 1.4.2 Low Threshold Current Density; 1.4.3 Material Gain and Modal Gain; 1.4.4 Broad Spectral Bandwidth Devices and Spectral Coverage; 1.4.5 Ultrafast Gain Recovery; 1.5 Extension of Emission Wavelength of GaAs-Based Quantum Dots.

1.5.1 Short-Wavelength Quantum Dot Light Emission1.5.1.1 InP/GaInP Quantum Dots; 1.5.1.2 Type II InAlAs/AlGaAs Quantum Dots; 1.5.2 Long-Wavelength QD Light Emission; 1.5.2.1 Low Growth Temperature InAs/GaAs Quantum Dots; 1.5.2.2 InAs QDs Grown on an InGaAs Metamorphic Layer; 1.5.2.3 InGaAsSb Capped InAs/GaAs Quantum Dots and InGaNAs Capped InAs/GaAs Quantum Dots; 1.5.2.4 Bilayer InAs/GaAs QD Structures; 1.5.2.5 Asymmetric Dot in WELL QD Structure; 1.6 Future Prospects; Acknowledgments; References; Chapter 2 Ultra-Short-Pulse QD Edge-Emitting Lasers; 2.1 Introduction; 2.2 Simulations.

2.3 Broadly Tunable Frequency-Doubled EC-QD Lasers2.4 Two-Section Monolithic Mode-Locked QD Lasers; 2.4.1 Simultaneous GS and ES ML; 2.4.2 QD Absorber Resistor-SEED Functionality; 2.4.3 Pulse Width Narrowing due to GS Splitting; 2.5 Tapered Monolithic Mode-Locked QD Lasers; 2.5.1 High-Peak Power and Subpicosecond Pulse Generation; 2.5.2 Suppression of Pulse Train Instabilities of Tapered QD-MLLs; 2.6 QD-SOAs; 2.6.1 Straight-Waveguide QD-SOAs; 2.6.2 Tapered-Waveguide QD-SOAs; 2.6.3 QD-SOA Noise; 2.7 Pulsed EC-QD Lasers with Tapered QD-SOA; 2.7.1 EC-MLQDL.

Includes bibliographical references at the end of each chapters and index.

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